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參數資料
| 型號： | TIM1112-15L |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 454K |
| 代理商： | TIM1112-15L |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1112-15L
TECHNICAL DATA
FEAT URES
n
HIGH POWER
P1dB=42.0dBm at 11.7GHz to 12.7GHz
n
HIGH GAIN
n
HERMETICALLY SEALED PACKAGE
G1dB=6.0dB at 11.7GHz to 12.7GHz
n
BROAD BAND INTERNALLY MATCHED FET
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
P
1dB
CONDITIONS
UNIT
MIN. TYP. MAX.
Output Power at 1dB
Compression Point
dBm
41.0
42.0
Power Gain at 1dB
Compression Point
G
1dB
dB
5.0
6.0
Drain Current
Gain Flatness
I
DS1
G
η
add
IM3
A
dB
%
dBc
-42
4.5
29
-45
5.5
±
0.8
Power Added Efficiency
3
rd
Order Intermodulation
Distortion
Drain Current
VDS
= 9
V
f
= 11.7 to 12.7GHz
IDS2
Two-tone Test
Po=30.0 dBm
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
A
4.5
5.5
Channel Temperature Rise
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
Tch
°
C
100
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 4.8A
V
GSoff
V
DS
=
3V
I
DS
= 145mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -145
μ
A
UNIT
mS
MIN. TYP. MAX.
3000
Pinch-off Voltage
V
-1.5
-3.0
-4.5
Saturated Drain Current
A
10.0
11.5
Gate-Source Breakdown
Voltage
V
-5
Thermal Resistance
R
th(c-c)
Channel to Case
°
C/W
2.0
2.5
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No
license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product
Rev. Mar. 2006
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