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參數資料
| 型號： | TIM1414-18L-252 |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 50K |
| 代理商： | TIM1414-18L-252 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
TIM1414-18L-252
Jan. 2004
FEATURES
HIGH POWER
P1dB=42.0dBm at 13.75GHz to 14.5GHz
HIGH GAIN
G1dB=6.0dB at 13.75GHz to 14.5GHz
LOW INTERMODULATION DISTORTION
IM3(Min.)=
25dBc at Po=36dBm Single Carrier Level
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
P
1dB
CONDITION
UNIT
MIN. TYP.
MAX.
Output Power at 1dB Gain
Compression Point
dBm
41.5
42.0
Power Gain at 1dB Gain
Compression Point
G
1dB
dB
5.0
6.0
Drain Current
I
DS1
η
add
IM
3
A
-25
5.5
6.0
Power Added Efficiency
VDS
= 9
V
IDSQ
4.4A
f
= 13.75 – 14.5GHz
%
24
3rd Order Intermodulation
Distortion
dBc
Drain Current
I
DS2
Tch
Two Tone Test
Po= 36.0dBm
(Single Carrier Level)
A
5.5
6.0
Channel Temperature Rise
V
DS
X I
DS
X R
th(c-c)
°
C
100
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITION
V
DS
=
3V
I
DS
= 4.8A
UNIT
mS
MIN. TYP.
MAX.
6000
Pinch-off Voltage
V
GSoff
V
DS
=
3V
I
DS
= 145mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -145
μ
A
V
-0.7
-1.6
-2.3
Saturated Drain Current
A
10.0
Gate-Source Breakdown
Voltage
V
-5
Thermal Resistance
R
th(c-c)
Channel to Case
°
C/W
1.8
2.3
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
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