- 您現在的位置：買賣IC網 > PDF目錄384976 > TIM5359-60SL (Toshiba Corporation) MICROWAVE POWER GaAs FET PDF資料下載
參數資料
| 型號： | TIM5359-60SL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 116K |
| 代理商： | TIM5359-60SL |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM5359-60SL
TECHNICAL DATA
FEAT URES
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 36.5dBm
Single Carrier Level
HIGH POWER
P1dB=48.0dBm at 5.3GHz to 5.9GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
HIGH GAIN
G1dB=9.0dB at 5.3GHz to 5.9GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P
1dB
CONDITIONS
UNIT
dBm
MIN. TYP.
47.0
MAX.
48.0
G
1dB
dB
8.0
9.0
I
DS1
Δ
G
η
add
IM
3
A
dB
%
dBc
-42
13.2
42
-45
15.0
±
0.8
V
DS
=10V
f = 5.3 to 5.9GHz
I
DS
set=9.5A
I
DS2
Δ
Tch
Two-Tone Test
Po=36.5dBm
(Single Carrier Level)
(VDS X IDS +Pin-P1dB)
X Rth(c-c)
(Max.)
A
°
C
11.8
100
Recommended Gate Resistance(Rg) : 28
Ω
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 12.0A
V
GSoff
V
DS
=
3V
I
DS
= 200mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -1.0mA
UNIT
S
MIN.
TYP.
20
MAX.
Pinch-off Voltage
V
-1.0
-1.8
-3.0
Saturated Drain Current
A
38
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
0.6
0.8
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006
相關PDF資料 |
PDF描述 |
|---|---|
| TIM6472-30SL | MICROWAVE POWER GaAs FET |
| TIM6472-8UL | MICROWAVE POWER GaAs FET |
| TIM7785-12UL | BROAD BAND INTERNALLY MATCHED FET |
| TIM7785-4UL | MICROWAVE POWER GaAs FET |
| TIP100 | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內置基極-射極分流電阻單片結構）) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TIM5359-8 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
| TIM5359-80SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,5GHZ,125W - Trays |
| TIM5359-8SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET, INTERNALLY MATCHED, 5GHZ, 37.5W - Trays |
| TIM5359-8UL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET, INTERNALLY MATCHED, 5GHZ, 37.5W - Trays |
| TIM-5510 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Embedded Mainboard |
發布緊急采購，3分鐘左右您將得到回復。