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參數資料
型號: TLC876MDWR
廠商: TEXAS INSTRUMENTS INC
元件分類: ADC
英文描述: 1-CH 10-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PDSO28
封裝: SOP-28
文件頁數: 20/22頁
文件大小: 339K
代理商: TLC876MDWR
TLC876M, TLC876I, TLC876C
10-BIT 20 MSPS PARALLEL OUTPUT CMOS
ANALOG-TO-DIGITAL CONVERTERS
SLAS140E – JULY 1997 – REVISED OCTOBER 2000
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
operating characteristics at AVDD = DVDD = 5 V, DRVDD = 3.3 V, VI(REFT) = 3.6 V, VI(REFB) = 1.6 V,
fCLK = 20 MSPS (unless otherwise noted)
dc accuracy
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Integral nonlinearity (INL)
±1.5
LSB
Differential nonlinearity (DNL) (see Note 1)
±0.5
<±1
LSB
Offset error
–0.4
%FSR
Gain error
0.2
%FSR
NOTE 1: A differential nonlinearity error of less than
±1 LSB ensures no missing codes.
analog input
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Ci
Input capacitance
5
pF
reference input
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Rref
Reference input resistance
350
500
Iref
Reference input current
4
mA
Reference top offset voltage
35
mV
Reference bottom offset voltage
35
mV
dynamic performance
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
All suffixes
fI = 1 MHz
8.5
Eff
ti
b
f bit (ENOB)
All suffixes
fI = 3.58 MHz,
TA = 25°C
8
8.5
Bit
Effective number of bits (ENOB)
C and I suffixes
fI = 3.58 MHz,
8
8.5
Bits
M suffix
I
,
TA = Full Range
7.5
All suffixes
fI = 10 MHz
8.1
All suffixes
fI = 1 MHz
53
Signal-to-total harmonic distortion+noise
All suffixes
fI = 3.58 MHz,
TA = 25°C
50
53
dB
Signal to total harmonic distortion+noise
(S/(THD+N))
C and I suffixes
fI = 3.58 MHz,
50
53
dB
M suffix
I
,
TA = Full Range
47
All suffixes
fI = 10 MHz
51
fI = 1 MHz
–63
Total harmonic distortion (THD)
fI = 3.58 MHz
–62
–56
dB
fI = 10 MHz
–61
Spurious free dynamic range
fI = 3.58 MHz
–64
dB
BW
Analog input full-power bandwidth
200
MHz
Differential phase
0.5
degrees
Differential gain
1%
The voltage difference between AVDD and DVDD cannot exceed 0.5 V to maintain performance specifications. At input clock rise times less than
20 ns, the offset full-scale error increases approximately by a factor of (20/tr)0.5 where tr equals the actual rise time in nanoseconds.
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