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參數(shù)資料
| 型號(hào)： | TP0101K |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 90K |
| 代理商： | TP0101K |
Specification Comparison
Vishay Siliconix
Document Number 74071
11-May-05
www.vishay.com
TP0101K vs. TP0101T
Description:
Package:
Pin Out:
Part Number Replacements:
TP0101K-T1-E3 Replaces TP0101T-T1-E3
TP0101K-T1-E3 Replaces TP0101T-T1
Summary of Performance:
The TP0101K is a technology upgrade with ESD protection to the original TP0101T. The ESD protection diodes on the gate
increases Gate-Body Leakage; otherwise, there is little variation regarding performance.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
T
A
= 25
°
C
Continuous Drain Current
T
A
= 70
°
C
Pulsed Drain Current
I
DM
Continuous Source Current
(MOSFET Diode Conduction)
T
A
= 25
°
C
Power Dissipation
T
A
= 70
°
C
Operating Junction & Storage Temperature Range
T
j
& T
stg
Maximum Junction-to-Ambient
R
thJA
SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
P-Channel,20-V (D-S) MOSFET, Low Threshold
SOT-23
Identical
TP0101K
-20
+8
-0.58
-0.46
TP0101T
-20
+8
-0.6
-0.48
Unit
V
I
D
-2
-0.3
-3
-0.6
I
S
A
0.35
0.22
0.35
0.22
P
D
W
-55 to 150
357
-55 to 150
357
°
C
°
C/W
TP0101K
Typ
TP0101T
Typ
Parameter
Symbol
Min
Max
Min
Max
Unit
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
-0.5
-1.2
-0.7
-1.0
+5000
-1
-0.5
-2.5
-0.9
-1.5
+100
-1
V
nA
μ
A
V
GS
= -4.5 V
On-State Drain Current
V
GS
= -2.5 V
I
D(on)
-0.5
-0.5
A
V
GS
= -4.5 V
0.42
0.65
0.45
0.65
Drain-Source On-Resistance
V
GS
= -2.5 V
r
DS(on)
0.64
0.85
0.69
0.85
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
a
g
fs
V
SD
1300
-0.9
1300
-0.9
S
V
-1.2
-1.2
Qg
Qgs
Qgd
Rg
1400
300
250
150
2200
2020
180
720
NS
3000
nC
t
d(on)
25
35
7
12
Turn-On Time
t
r
30
45
25
35
t
d(off)
55
85
19
30
Turn-Off Time
t
f
38
60
9
15
ns
NS denotes not specified in original datasheet
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TP0101K-T1-E3 | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0101T | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0101TS | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0101T | P-Channel Enhancement-Mode MOSFET Transistor(漏源電壓-20V的P溝道增強(qiáng)型MOSFET晶體管) |
| TP0202K | CONNECTOR ACCESSORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP0101K_04 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0101K_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| TP0101K-T1-E3 | 功能描述:MOSFET 20V 0.58A 0.65Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0101K-T1-E3 | 制造商:Vishay Siliconix 功能描述:P CH MOSFET -20V 580mA TO-236 |
| TP0101K-T1-GE3 | 功能描述:MOSFET 20V 0.58A 0.35W 650mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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