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參數資料
| 型號： | TP0101TS |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 35K |
| 代理商： | TP0101TS |
TP0101T/TS
Vishay Siliconix
Document Number: 70229
S-04279—Rev. D, 16-Jul-01
www.vishay.com
11-1
P-Channel 20-V (D-S) MOSFET, Low-Threshold
I
D
(A)
V
DS
(V)
r
DS(on)
( )
TP0101T
TP0101TS
0.65 @ V
GS
= –4.5 V
–0.6
–1.0
–20
0.85 @ V
GS
= –2.5 V
–0.5
–0.9
High-Side Switching
Low On-Resistance: 0.45
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 32 ns
2.5-V or Lower Operation
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
Battery Operated Systems, DC/DC Converters
Power Supply Converter Circuits
Load/Power Switching–Cell Phones, Pagers
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Marking Code:
TP0101T: PO
wll
TP0101TS: PS
wll
w
= Week Code
l
= Lot Traceability
Parameter
Symbol
TP0101T
TP0101TS
c
Unit
Drain-Source Voltage
V
DS
–20
–20
Gate-Source Voltage
V
GS
8
8
V
T
A
= 25 C
–0.6
–1.0
Continuous Drain Current
(T
J
= 150 C)
b
T
A
= 70 C
I
D
–0.48
–0.8
Pulsed Drain Current
a
I
DM
–3
–3
A
Continuous Source Current (Diode Conduction)
b
I
S
–0.6
–1.0
T
A
= 25 C
0.35
1.0
Power Dissipation
b
T
A
= 70 C
P
D
0.22
0.65
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
–55 to 150
C
Parameter
Symbol
TP0101T
TP0101TS
c
Unit
Thermal Resistance, Junction-to-Ambient
b
R
thJA
357
125
C/W
Notes
a.
b.
c.
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
Copper lead frame.
10 sec.
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