- 您現在的位置：買賣IC網 > PDF目錄385007 > TP0202T (Vishay Intertechnology,Inc.) P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-20V的P溝道增強型MOSFET晶體管) PDF資料下載
參數資料
| 型號： | TP0202T |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-20V的P溝道增強型MOSFET晶體管) |
| 中文描述： | P通道增強型MOSFET晶體管（最小漏源擊穿電壓- 20V的的P溝道增強型MOSFET的晶體管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 42K |
| 代理商： | TP0202T |
TP0202T
Siliconix
S-52426—Rev. F, 14-Apr-97
1
P-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
1.4 @ V
GS
= –10 V
–1.3 to – 3 V
–0.41
–20
3.5 @ V
GS
= –4.5 V
–1.3 to – 3 V
–0.27
Features
High-Side Switching
Low On-Resistance: 0.9
Low Threshold: –2.1 V
Fast Switching Speed: 18 ns
Low Input Capacitance: 55 pF
Benefits
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
Applications
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
*Marking Code for TO-236
TP0202T (P3)*
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
–20
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 150 C)
T
A
=
I
D
–0.41
T
A
=
–0.26
A
Pulsed Drain Current
a
I
DM
–0.75
Power Dissipation
T
A
=
P
D
0.35
W
T
A
=
0.22
Maximum Junction-to-Ambient
R
thJA
357
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70208.
Applications information may also be obtained via FaxBack, request document #70611.
相關PDF資料 |
PDF描述 |
|---|---|
| TP0202 | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0202T | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0205A | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0205AD | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0205A | P-Channel 20-V MOSFET(漏源電壓-20V的P溝道增強型MOSFET) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TP0202T-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 0.41A 3-Pin TO-236 T/R |
| TP0205A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0205AD | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0205AD-T1 | 功能描述:MOSFET 20V 0.10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0205A-T1 | 功能描述:MOSFET RO 781-SI1303DL-E3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。