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參數資料
型號: TP0101T
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel Enhancement-Mode MOSFET Transistor(漏源電壓-20V的P溝道增強型MOSFET晶體管)
中文描述: P通道增強型MOSFET晶體管(漏源電壓- 20V的的P溝道增強型MOSFET的晶體管)
文件頁數: 1/4頁
文件大?。?/td> 51K
代理商: TP0101T
*Marking Code for TO-236
TP0101T (P0)*
TP0101TS (PS)*
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
TP0101T/TS
Siliconix
S-52430—Rev. C, 05-May-97
1
P-Channel Enchancement-Mode MOSFET
Product Summary
I
D
(A)
V
DS
(V)
r
DS(on)
( )
TP0101T
TP0101TS
0.65 @ V
GS
= –4.5 V
–0.6
–1.0
–20
0.85 @ V
GS
= –2.5 V
–0.5
–0.9
Features
High-Side Switching
Low On-Resistance: 0.45
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 32 ns
2.5-V or Lower Operation
Benefits
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Applications
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
Battery Operated Systems, DC/DC Converters
Power Supply Converter Circuits
Load/Power Switching–Cell Phones, Pagers
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Parameter
Symbol
TP0101T
TP0101TS
c
Unit
Drain-Source Voltage
V
DS
–20
–20
V
Gate-Source Voltage
V
GS
8
8
Continuous Drain Current (T
J
= 150 C)
b
T
A
= 25 C
I
D
–0.6
–1.0
T
A
= 70 C
–0.48
–0.8
A
Pulsed Drain Current
a
I
DM
–3
–3
Continuous Source Current (Diode Conduction)
b
I
S
–0.6
–1.0
Power Dissipation
b
T
A
= 25 C
P
D
0.35
1.0
W
T
A
= 70 C
0.22
0.65
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
–55 to 150
C
Thermal Resistance Ratings
Parameter
Symbol
TP0101T
TP0101TS
c
Unit
Maximum Junction-to-Ambient
b
R
thJA
357
125
C/W
Notes
a.
b.
c.
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
Copper lead frame.
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70229.
A SPICE Model data sheet is available for this product (FaxBack document #70559).
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TP0202T P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-20V的P溝道增強型MOSFET晶體管)
TP0202 P-Channel 20-V (D-S) MOSFET, Low-Threshold
相關代理商/技術參數
參數描述
TP0101TS 功能描述:MOSFET 20V 1A 0.35W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP0101TS-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 1A 3-Pin TO-236 T/R
TP0101T-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 0.6A 3-Pin TO-236 T/R
TP0102 制造商:Distributed By MCM 功能描述:Seal Tape - 1/2'' x 520' 制造商:MCM 功能描述:PTFE THRAAD SEAL TAPE 1/2 X 520
TP0104N3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | TO-92
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