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參數資料
| 型號： | TP0202K-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 62K |
| 代理商： | TP0202K-T1-E3 |
TP0202K
Vishay Siliconix
Document Number: 71609
S-41777—Rev. D, 04-Oct-04
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS(min)
(V)
r
DS(on)
( )
V
GS(th)
(V)
I
D
(mA)
Q
g
(Typ)
1.4 @ V
GS
=
10 V
3.5 @ V
GS
=
4.5 V
1.3 to
3.0
385
1000
30
1.3 to
3.0
240
FEATURES
BENEFITS
APPLICATIONS
High-Side Switching
Low On-Resistance: 1.2
(typ)
Low Threshold:
2.0 V (typ)
Fast Swtiching Speed: 14 ns (typ)
Low Input Capacitance: 31 pF (typ)
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven Without Buffer
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid State Relays
Marking Code: 2K
wll
2K = Part Number Code for TP0202K
w
= Week Code
ll
= Lot Traceability
Ordering Information:
TP0202K-T1
TP0202K-T1—E3 (Lead (Pb)-Free)
TO-236
(SOT-23)
Top View
2
1
S
D
G
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 150 C)
a
T
A
= 25 C
I
D
385
T
A
= 85 C
280
mA
Pulse Drain Current
b
I
DM
750
Power Dissipation
a
T
A
= 25 C
350
mW
T
A
= 85 C
P
D
185
Maximum Junction-to-Ambient
a
R
thJA
350
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Notes
a.
b.
Surface mounted on FR4 board.
Pulse width limited by maximum junction temperature.
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PDF描述 |
|---|---|
| TP0202T | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-20V的P溝道增強型MOSFET晶體管) |
| TP0202 | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0202T | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0205A | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| TP0205AD | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TP0202K-T1-E3 | 制造商:Vishay Siliconix 功能描述:P CH MOSFET -30V 385mA TO-236 制造商:Vishay Siliconix 功能描述:P CH MOSFET, -30V, 385mA, TO-236 |
| TP0202K-T1-GE3 | 功能描述:MOSFET 30V 0.385A 350mW 3.5ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0202T | 功能描述:MOSFET 20V 0.41A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0202T-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 0.41A 3-Pin TO-236 T/R |
| TP0205A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET, Low-Threshold |
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