欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: TP0610T
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V,夾斷電流-0.12A的P溝道增強型MOSFET晶體管)
中文描述: P通道增強型MOSFET晶體管(最小漏源擊穿電壓- 60V的,夾斷電流,0.12A的P溝道增強型MOSFET的晶體管)
文件頁數: 1/4頁
文件大小: 96K
代理商: TP0610T
TP0610L/T, VP0610L/T, BS250
Siliconix
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S-52426—Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors
Phone (408)988-8000
FaxBack (408)970-5600
www.siliconix.com
1
P-Ch Enhancement-Mode MOSFET Transistors
TP0610L
–60
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
14 @ V
GS
= –10 V
–1 to –2.4
–0.18
TP0610T
–60
–1 to –2.4
–0.12
VP0610L
–60
–1 to –3.5
–0.18
VP0610T
–60
–1 to –3.5
–0.12
BS250
–45
–1 to –3.5
–0.18
High-Side Switching
Low On-Resistance: 8
Low Threshold: –1.9 V
Fast Switching Speed: 16 ns
Low Input Capacitance: 15 pF
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
TP0610T (T0)*
VP0610T (V0)*
*Marking Code for TO-236
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
BS250
TP0610L
VP0610L
Drain-Source Voltage
V
DS
V
GS
–60
–60
–60
–60
–45
V
Gate-Source Voltage
30
30
30
30
25
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
T
A
= 100 C
D
I
–0.18
–0.12
–0.18
–0.12
–0.18
–0.11
–0.07
–0.11
–0.07
A
Pulsed Drain Current
A
I
DM
–0.8
–0.4
–0.8
–0.4
Power Dissipation
Power Dissi ation
T
A
= 25 C
T
A
= 100 C
P
D
0.8
0.36
0.8
0.36
0.83
W
0.32
0.14
0.32
0.14
Maximum Junction-to-Ambient
R
thJA
T
J
, T
stg
156
350
156
350
150
C/W
Operating Junction & Storage Temperature Range
–55 to 150
C
Notes
A.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70209.
Applications information may also be obtained via FaxBack, request document #70611.
相關PDF資料
PDF描述
TP0610T P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-61V,P溝道增強型垂直DMOS結構場效應管)
TP0620 P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-200V,低門限2.4V,P溝道增強型垂直DMOS結構場效應管)
TP11362AV Quad Adaptive Differential PCM Processor
TP11362A Quad Adaptive Differential PCM Processor(四通道適應性微分PCM處理器)
TP11362 CONNECTOR
相關代理商/技術參數
參數描述
TP0610T-G 功能描述:MOSFET -60V 100hm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP0610TT1 制造商:SILICONIX 功能描述:*
TP0610T-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 60V 0.12A 3-Pin TO-236 T/R
TP0620 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs
TP0620N3 功能描述:MOSFET 200V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 沿河| 沅陵县| 扶余县| 瑞安市| 彝良县| 台江县| 周口市| 名山县| 贵溪市| 阿拉善右旗| 神农架林区| 内江市| 遵化市| 邵东县| 介休市| 三门县| 牟定县| 北京市| 常德市| 水城县| 禄丰县| 泾阳县| 榆社县| 曲周县| 阳城县| 长葛市| 新干县| 婺源县| 寻乌县| 绍兴市| 梅河口市| 沅江市| 阿巴嘎旗| 松原市| 永德县| 赤城县| 都匀市| 五原县| 雷波县| 铁岭县| 武定县|