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參數(shù)資料
| 型號(hào)： | TPV596A |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 94K |
| 代理商： | TPV596A |
1
TPV596A
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and
500 mW Band V TV transposer stages. Gold metallization and diffused emitter
ballast resistors are used to enhanced reliability, ruggedness and linearity.
Band IV and V (470–860 MHz)
0.5 W — Pref @ –58 dB IMD
High Gain — 12 dB Typ, Class A, f = 860 MHz
Gold Metallization for Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
24
Vdc
Collector–Base Voltage
45
Vdc
Emitter–Base Voltage
3.5
Vdc
Collector Current — Continuous
0.7
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
8.75
0.05
Watts
W/
°
C
Operating Junction Temperature
TJ
Tstg
200
°
C
Storage Temperature Range
–65 to +200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (TC = 70
°
C)
R
θ
JC
20
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 1.0 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 4.0 mA, IC = 0)
Emitter–Base Leakage Current
(VEB = 2.0 V)
Collector Cutoff Current
(VCB = 28 V, IE = 0)
Collector–Emitter Breakdown Voltage
(IC = 20 mA, RBE = 10
)
V(BR)CEO
24
—
—
Vdc
V(BR)CBO
45
—
—
Vdc
V(BR)EBO
3.5
—
—
Vdc
IEBO
—
—
0.25
mA
ICBO
—
—
1.0
mAdc
V(BR)CER
50
—
—
Vdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 5.0 V)
hFE
15
—
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz)
Cob
—
—
5.0
pF
(continued)
Order this document
by TPV596A/D
SEMICONDUCTOR TECHNICAL DATA
0.5 W, 470–860 MHz
UHF LINEAR
POWER TRANSISTOR
CASE 244–04, STYLE 1
(.280 SOE)
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