
1
TPV597
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold
metallized dice and diffused emitter ballast resistors are used to enhance
reliability, ruggedness and linearity.
Band IV and V (470–860 MHz)
1.0 W — Pref @ –58 dB IMD
20 V — VCC
High Gain — 11 dB Typ, Class A @ f = 860 MHz
Gold Metallization for Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
24
Vdc
Collector–Base Voltage
45
Vdc
Emitter–Base Voltage
3.5
Vdc
Collector Current — Continuous
1.4
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
19
0.11
Watts
W/
°
C
Operating Junction Temperature
TJ
Tstg
200
°
C
Storage Temperature Range
–65 to +200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
9.0
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 40 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 2.0 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 4.0 mA, IC = 0)
Emitter–Base Leakage Current (VEB = 2.0 V)
Collector–Emitter Breakdown Voltage (IC = 40 mA, RBE = 10
)
Collector Cutoff Current (VCB = 30 V, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 200 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 20 V, Pout = 1.0 W, f = 860 MHz, IE = 0.44 A)
Load Mismatch
(VCE = 20 V, Pout = 2.0 W, IE = 0.44 A, f = 860 MHz,
Load VSWR =
∞
:1, All Phase Angles)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
V(BR)CER
ICBO
24
—
—
Vdc
45
—
—
Vdc
3.5
—
—
Vdc
—
—
0.5
mA
50
—
—
Vdc
—
—
1.2
mAdc
hFE
15
—
120
—
Cob
—
—
7.0
pF
GPE
10.5
11
—
dB
ψ
No Degradation in Output Power
(continued)
Order this document
by TPV597/D
SEMICONDUCTOR TECHNICAL DATA
1.0 W, 470–860 MHz
UHF LINEAR
POWER TRANSISTOR
CASE 244–04, STYLE 1
(.280 SOE)