- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385019 > TSMF3710 (Vishay Intertechnology,Inc.) High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero PDF資料下載
參數(shù)資料
| 型號(hào)： | TSMF3710 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| 中文描述： | 高速紅外發(fā)光二極管，870納米，雙異質(zhì)的GaAIAs |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 135K |
| 代理商： | TSMF3710 |
TSMF3710
Vishay Semiconductors
Document Number 81088
Rev. 1.3, 21-Feb-07
www.vishay.com
1
94
8
553
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
TSMF3710 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology in a miniature
PLCC-2 SMD package.
DH technology combines high speed with high radiant
power at wavelength of 870 nm.
Features
High radiant power
High speed t
r
= 30 ns
High modulation band width f
c
= 12 MHz
Peak wavelength
λ
p
= 870 nm
High reliability
Low forward voltage
Suitable for high pulse current application
Wide angle of half intensity
Compatible with automatic placement equipment
EIA and ICE standard package
Suitable for infrared, vapor phase and wavesolder
process
8mm tape and reel standard: GS08 or GS18
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
Applications
High speed IR data transmission
High power emitter for low space applications
High performance transmissive or reflective sen-
sors
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Part
Ordering code
Remarks
TSMF3710-GS08
TSMF3710-GS08
MOQ: 7500 pc
TSMF3710-GS18
TSMF3710-GS18
MOQ: 8000 pc
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
Unit
V
Forward current
100
mA
Peak forward current
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
200
mA
Surge forward current
1
A
Power dissipation
170
mW
Junction temperature
100
°C
Operating temperature range
- 40 to + 85
°C
Storage temperature range
- 40 to + 100
°C
Soldering temperature
t
≤
10 sec
260
°C
Thermal resistance junction/
ambient
450
K/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSMF3710-GS08 | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| TSMF3710-GS18 | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| TSML1000 | High-Power SMD IRED GaAlAs/GaAs |
| TSML1020 | Extented Power IR Emitting Diode in SMD Package |
| TSML1040 | Extented Power IR Emitting Diode in SMD Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSMF3710-GS08 | 功能描述:紅外發(fā)射源 60 Degree 170mW RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSMF3710-GS18 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| TSML1000 | 功能描述:紅外發(fā)射源 5V 35mW 940nm 12 Deg RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSML1000 | 制造商:Vishay Semiconductors 功能描述:IR Emitting Diode |
| TSML1000_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。