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參數資料
| 型號： | UBA2051C |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | One-chip telephone ICs with speech, dialler and ringer functions |
| 中文描述： | 一個有語言，撥號及振鈴電話集成電路芯片的功能 |
| 文件頁數： | 35/52頁 |
| 文件大小： | 292K |
| 代理商： | UBA2051C |
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2000 May 19
35
Philips Semiconductors
Product specification
One-chip telephone ICs with speech,
dialler and ringer functions
UBA2050(A); UBA2051(A;C)
G
v(DTMF)(T)
voltage gain variation with
temperature
voltage gain from pin DTMF
to pin RX (confidence tone)
T
amb
=
25 to +75
°
C;
referenced to T
amb
= 25
°
C
in tone dialling mode;
V
DTMF
= 20 mV (RMS);
R
L2
= 10 k
;
±
0.4
dB
G
v(ct)
9.2
dB
Receive stages
R
ECEIVE AMPLIFIER
(
PINS
IR
AND
RX)
Z
i
input impedance
G
v(RX)
voltage gain from
pin IR to pin RX
G
v(RX)
voltage gain reduction of
receive amplifier
G
v(RX)(f)
voltage gain variation with
frequency
G
v(RX)(T)
voltage gain variation with
temperature
I
o(RX)(max)
maximum source and sink
current on pin RX
(peak value)
V
RX(max)(rms)
maximum receiving signal on
pin RX (RMS value)
V
n(RX)(rms)
noiseoutputvoltageat pin RX
(RMS value)
32.4
21.5
33.4
34.4
k
dB
V
IR
= 4 mV (RMS)
internal MUTE active
80
dB
f = 300 to 3400 Hz;
referenced to f = 1 kHz
T
amb
=
25 to +75
°
C;
referenced to T
amb
= 25
°
C
I
P
= 0 mA; sine wave drive
±
0.2
dB
±
0.3
dB
50
μ
A
I
P
= 0 mA; sine wave drive;
without R
L2
; THD = 2%
pin IR open-circuit;
R
L2
= 10 k
;
psophometrically weighted
(P53 curve)
0.4
V
86
dBVp
E
ARPIECE AMPLIFIER
(
PINS
GAR
AND
QR)
G
v(QR)
voltage gain from pin RX to
pin QR
voltage gain setting range
V
IR
= 4 mV (RMS);
R
E1
= R
GAR
= 100 k
R
E1
= 100 k
I
P
= 0 mA; sine wave drive;
R
L1
= 150
; THD = 2%
I
P
= 0 mA; sine wave drive;
R
L1
= 450
; THD = 2%
IR open-circuit;
R
L1
= 150
;
R
E1
= R
GAR
= 100 k
;
psophometrically weighted
(P53 curve)
R
E1
= 100 k
;
R
GAR
= 25 k
0
dB
G
v(QR)
V
QR(max)(rms)
maximum receiving signal on
pin QR (RMS value)
14
0.3
0.38
+12
dB
V
0.46
0.56
V
V
n(QR)(rms)
noise output voltage at
pin QR (RMS value)
86
dBVp
98
dBVp
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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