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參數(shù)資料
| 型號： | UPA1756G |
| 廠商： | NEC Corp. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | UPA1756G |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1756
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D12909EJ1V0DS00 (1st edition)
Date Published February 1999 NS CP (K)
Printed in Japan
DATA SHEET
PACKAGE DRAWING (Unit : mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 Max.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 Max.
0.10
1
4
8
5
1
2
7, 8
3
4
5, 6
; Source 1
; Gate 1
; Drain 1
; Source 2
; Gate 2
; Drain 2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
This product is Dual N-Channel MOS Field Effect
Transistor designed for power management
application of notebook computers, and Li-ion
battery application.
FEATURES
Dual MOS FET chips in small package
2.5-V gate drive type and low on-resistance
R
DS(on)1
= 30 m
MAX. (V
GS
= 4.5 V, I
D
= 3.0 A)
R
DS(on)2
= 40 m
MAX. (V
GS
= 2.5 V, I
D
= 3.0 A)
Low C
iss
C
iss
= 800 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1756G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±12.0
V
Drain Current (DC)
I
D(DC)
±6.0
A
Drain Current (Pulse)
Note1
I
D(pulse)
±24
A
Total Power Dissipation (1 unit)
Note2
P
T
1.7
W
Total Power Dissipation (2 unit)
Note2
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
T
A
= 25 °C, Mounted on ceramic substrate of 2000 mm
2
x 1.1 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may
be applied to this device.
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| UPA1757 | Switching N-channel power MOS FET industrial use |
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| UPA1758G | Switching N-channel power MOS FET industrial use |
| UPA1759G | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| UPA1757 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1757G | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1758 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1758G | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1759 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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