欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: UPD45128163G5-A10LT-9JF
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
中文描述: 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: PLASTIC, TSOP2-54
文件頁數: 1/86頁
文件大小: 774K
代理商: UPD45128163G5-A10LT-9JF
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
MOS INTEGRATED CIRCUIT
μ
PD45128163-T
128M-bit Synchronous DRAM
4-bank, LVTTL
WTR (Wide Temperature Range)
DATA SHEET
Document No. E0348N10 (Ver.1.0)
Date Published February 2003 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
Elpida Memory, Inc. 2003
Description
The
μ
PD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as
2,097,152
×
16
×
4 (word
×
bit
×
bank).
The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAM is compatible with Low Voltage TTL (LVTTL).
This product is packaged in 54-pin TSOP (II).
Features
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0(A13) and BA1(A12)
Byte control by LDQM and UDQM
Programmable Wrap sequence (Sequential / Interleave)
Programmable burst length (1, 2, 4, 8 and full page)
Programmable /CAS latency (2 and 3)
Ambient temperature (T
A
):
20 to + 85
°
C
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
×
16 organization
Single 3.3 V
±
0.3 V power supply
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64 ms
Burst termination by Burst stop command and Precharge command
相關PDF資料
PDF描述
UPD45128163G5-A80T-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A75T-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A10T-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A80-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128441G5-A10-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL
相關代理商/技術參數
參數描述
UPD45128163G5-A75-9JF 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
UPD45128841G5-A75-9JF 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP
UPD4516161AG5A109NF 制造商:NEC Electronics Corporation 功能描述:
UPD4516161AG5-A10-9NF 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP
UPD4528BC 制造商:Panasonic Industrial Company 功能描述:IC
主站蜘蛛池模板: 玛多县| 鄄城县| 彝良县| 康马县| 天镇县| 巴彦县| 界首市| 武川县| 西城区| 海南省| 崇仁县| 台中县| 双牌县| 务川| 凌云县| 南和县| 宁陵县| 台中县| 福清市| 涪陵区| 称多县| 三都| 丹寨县| 陈巴尔虎旗| 拉萨市| 囊谦县| 滦平县| 建平县| 万载县| 武宁县| 通州市| 三门县| 乌拉特后旗| 内江市| 驻马店市| 颍上县| 建水县| 台前县| 建阳市| 临洮县| 万年县|