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參數資料
| 型號： | W25P022AD-6 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 64K X 32 STANDARD SRAM, 6 ns, PQFP100 |
| 封裝： | MO-136, TQFP-100 |
| 文件頁數： | 6/17頁 |
| 文件大小： | 310K |
| 代理商： | W25P022AD-6 |
W25P022A
- 6 -
Write Table, continued
READ/WRITE FUNCTION
GW
BWE
BW4
BW3
BW2
BW1
Write byte 4, byte 2
1
0
0
1
0
1
Write byte 4, byte 2, byte 1
1
0
0
1
0
0
Write byte 4, byte 3
1
0
0
0
1
1
Write byte 4, byte 3, byte 1
1
0
0
0
1
0
Write byte 4, byte 3, byte 2
1
0
0
0
0
1
Write all bytes I/O1
I/O32
Write all bytes I/O1
I/O32
1
0
0
0
0
0
0
X
X
X
X
X
The ZZ state is a low-power state in which the device consumes less power than in the unselected
mode. Enabling the ZZ pin for a fixed period of time will force the SRAM into the ZZ state. Pulling the
ZZ pin low for a set period of time will wake up the SRAM again. While the SRAM is in ZZ mode, data
retention is guaranteed, but the chip will not monitor any input signal except for the ZZ pin. In the
unselected mode, on the other hand, all the input signals are monitored.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNIT
Core Supply Voltage to Vss
-0.5 to 4.6
V
I/O Supply Voltage to Vss
-0.5 to 4.6
V
Input/Output to V
SSQ
Potential
V
SSQ
-0.5 to V
DDQ
+0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperaure
-65 to 150
°
C
°
C
Operating Temperature
0 to +70
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
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相關代理商/技術參數 |
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| W25P022AD-7 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
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| W25P022AF-7 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25P10 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI |
| W25P10-VNI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI |
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