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參數資料
| 型號： | W25P022AD-6 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 64K X 32 STANDARD SRAM, 6 ns, PQFP100 |
| 封裝： | MO-136, TQFP-100 |
| 文件頁數： | 7/17頁 |
| 文件大小： | 310K |
| 代理商： | W25P022AD-6 |
W25P022A
Publication Release Date: September 1996
- 7 -
Revision A1
OPERATING CHARACTERISTICS
(V
DD
/V
DDQ
= 3.15V to 3.6V, V
SS
/
V
SSQ
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP
.
MAX.
UNIT
Input Low Voltage
V
IL
-
-0.5
-
+0.8
V
Input High Voltage
V
IH
-
+2.0
-
V
DD
+0.3
V
Input Leakage Current
I
LI
V
IN
= V
SSQ
to V
DDQ
-10
-
+10
μ
A
μ
A
Output Leakage
Current
I
LO
V
I/O
= V
SSQ
to V
DDQ,
and data
I/O pins in high-Z state defined
in truth table
-10
-
+ 10
Output Low Voltage
V
OL
I
OL
= +8.0 mA
-
-
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0 mA
2.4
-
-
V
Operating Current
I
DD
T
CYC
≥
min., I/O = 0 mA
Unselected mode defined in
truth table, V
IN
, V
IO
= V
IH
(min.) /V
IL
(max.) T
CYC
≥
min.
ZZ mode, T
CYC
≥
min.
-
-
250
mA
Standby Current
I
SB
-
-
80
mA
ZZ Mode Current
I
ZZ
-
-
5
mA
Note: Typical characteristics are measured at V
DD
= 3.3V, T
A
= 25
°
C.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
°
C, f = 1 MHz)
PARAMETER
SYM.
CONDITIONS
MAX.
UNIT
Input Capacitance
C
IN
V
IN
= 0V
6
pF
Input/Output Capacitance
C
I/O
V
OUT
= 0V
8
pF
Note: These parameters are sampled but not 100% tested.
AC TEST CONDITIONS
PARAMETER
CONDITIONS
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
2 nS
Input and Output Timing Reference Level
1.5V
Output Load
C
L
= 30 pF, I
OH
/I
OL
= -4 mA/8 mA
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