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參數資料
型號: W25P025A
廠商: WINBOND ELECTRONICS CORP
英文描述: 64K×32 Burst Pipeline High-Speed CMOS Static RAM(64K×32位同步脈沖管線高速CMOS靜態RAM)
中文描述: 64K的管道爆裂× 32高速CMOS靜態RAM(64K的× 32位同步脈沖管線高速的CMOS靜態RAM)的
文件頁數: 4/17頁
文件大小: 313K
代理商: W25P025A
W25P025A
- 4 -
TRUTH TABLE
CYCLE
ADDRESS
USED
CE1
CE2
CE3
ADSP
ADSC
ADV
OE
DATA
WRITE*
Unselected
No
1
X
X
X
0
X
X
Hi-Z
X
Unselected
No
0
X
1
0
X
X
X
Hi-Z
X
Unselected
No
0
0
X
0
X
X
X
Hi-Z
X
Unselected
No
0
X
1
1
0
X
X
Hi-Z
X
Unselected
No
0
0
X
1
0
X
X
Hi-Z
X
Begin Read
External
0
1
0
0
X
X
X
Hi-Z
X
Begin Read
External
0
1
0
1
0
X
X
Hi-Z
Read
Continue Read
Next
X
X
X
1
1
0
1
Hi-Z
Read
Continue Read
Next
X
X
X
1
1
0
0
D-Out
Read
Continue Read
Next
1
X
X
X
1
0
1
Hi-Z
Read
Continue Read
Next
1
X
X
X
1
0
0
D-Out
Read
Suspend Read
Current
X
X
X
1
1
1
1
Hi-Z
Read
Suspend Read
Current
X
X
X
1
1
1
0
D-Out
Read
Suspend Read
Current
1
X
X
X
1
1
1
Hi-Z
Read
Suspend Read
Current
1
X
X
X
1
1
0
D-Out
Read
Begin Write
Current
X
X
X
1
1
1
X
Hi-Z
Write
Begin Write
Current
1
X
X
X
1
1
X
Hi-Z
Write
Begin Write
External
0
1
0
1
0
X
X
Hi-Z
Write
Continue Write
Next
X
X
X
1
1
0
X
Hi-Z
Write
Continue Write
Next
1
X
X
X
1
0
X
Hi-Z
Write
Suspend Write
Current
X
X
X
1
1
1
X
Hi-Z
Write
Suspend Write
Current
1
X
X
X
1
1
X
Hi-Z
Write
Notes:
1. For a detailed definition of read/write, see the Write Table below.
2. An "X" means don't care, "1" means logic high, and "0" means logic low.
3. The OE pin enables the data output but is not synchronous with the clock. All signals of the SRAM are sampled synchronous to
the bus clock except for theOE pin.
4. On a write cycle that follows a read cycle, OE must be inactive prior to the start of the write cycle to allow write data to set up the
SRAM. OE must also disable the output buffer prior to the end of a write cycle to ensure the SRAM data hold timings
are met.
相關PDF資料
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W25P222A 64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
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