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參數(shù)資料
| 型號： | W25P240AF-6A |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | x64 Fast Synchronous SRAM |
| 中文描述： | 64K X 64 STANDARD SRAM, 7 ns, PQFP100 |
| 封裝： | MO-108, QFP-100 |
| 文件頁數(shù)： | 6/14頁 |
| 文件大小： | 166K |
| 代理商： | W25P240AF-6A |
W25P240A
- 6 -
Write Table, continued
READ/WRITE FUNCTION
Write byte 8, byte 7, byte 6,
byte 5, byte 4, byte 3
Write byte 8, byte 7, byte 6,
byte 5, byte 4, byte 3, byte 1
Write byte 8, byte 7, byte 6,
byte 5, byte 4, byte 3, byte 2
Write all bytes
Write all bytes
GW
1
BWE
0
BW8
0
BW7
0
BW6
0
BW5
0
BW4
0
BW3
0
BW2
1
BW1
1
1
0
0
0
0
0
0
0
1
0
1
0
0
0
0
0
0
0
0
1
1
0
0
x
0
x
0
x
0
x
0
x
0
x
0
x
0
x
0
x
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
-0.5 to 4.6
UNIT
V
V
W
°
C
°
C
Supply Voltage to Vss
Input/Output to V
SS
Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
V
SS
-0.5 to V
DD
+0.5
1.5
-65 to 150
0 to +55
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(V
DD
= 3.15V to 3.6V, V
SS
= 0V, T
A
= 0 to 55
°
C)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP
.
-
-
-
-
MAX.
UNIT
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage
Current
V
IL
V
IH
I
LI
I
LO
-
-
-0.5
+2.0
-10
-10
+0.8
V
V
μ
A
μ
A
V
DD
+0.3
+10
+ 10
V
IN
= V
SS
to V
DD
V
I/O
= V
SS
to V
DD,
and data I/O
pins in high-Z state defined in
truth table
I
OL
= +8.0 mA
I
OH
= -4.0 mA
T
CYC
≥
min., I/O = 0 mA
Unselected mode defined in
truth table, V
IN
, V
IO
= V
IH
(min.) /V
IL
(max.) T
CYC
≥
min.
Output Low Voltage
Output High Voltage
Operating Current
Standby Current
V
OL
V
OH
I
DD
I
SB
-
-
-
-
-
0.4
-
350
80
V
V
2.4
-
-
mA
mA
Note: Typical characteristics are measured at V
DD
= 3.3V, T
A
= 25
°
C.
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