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參數(shù)資料
| 型號(hào)： | W25P243AF-5 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | DIODE ZENER QUAD COMMON-ANODE 200mW 15Vz 5mA-Izt 0.0612 0.1uA-Ir 10.5 SOT-363 3K/REEL |
| 中文描述： | 64K X 64 STANDARD SRAM, 5 ns, PQFP128 |
| 封裝： | QFP-128 |
| 文件頁(yè)數(shù)： | 5/18頁(yè) |
| 文件大小： | 264K |
| 代理商： | W25P243AF-5 |
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W25P243A
Publication Release Date: August 1999
- 5 -
Revision A3
Truth Table, continued
CYCLE
ADDRESS
USED
CE1
CE2
CE3
ADSP
ADSC
ADV
OE
DATA
WRITE*
Begin Write
Current
X
X
X
1
1
1
X
Hi-Z
Write
Begin Write
Current
1
X
X
X
1
1
X
Hi-Z
Write
Begin Write
External
0
1
0
1
0
X
X
Hi-Z
Write
Continue Write
Next
X
X
X
1
1
0
X
Hi-Z
Write
Continue Write
Next
1
X
X
X
1
0
X
Hi-Z
Write
Suspend Write
Current
X
X
X
1
1
1
X
Hi-Z
Write
Suspend Write
Current
1
X
X
X
1
1
X
Hi-Z
Write
Notes:
1. For a detailed definition of read/write, see the Write Table below.
2. An "X" means don't care, "1" means logic high, and "0" means logic low.
3. The
OE
pin enables the data output and is not sampled with the clock. All signals of the SRAM are sampled synchronously
with the bus clock except for the OE pin.
4. On a write cycle that follows a read cycle,
OE
must be inactive prior to the start of write cycle to allow write data to setup to
the SRAM. OE must also disable the output buffer prior to the finish of a write cycle to ensure the SRAM data hold timings
are met.
WRITE TABLE
READ/WRITE FUNCTION
GW
1
1
BWE
1
0
BW8
X
1
BW7
X
1
BW6
X
1
BW5
X
1
BW4
X
1
BW3
X
1
BW2
X
1
BW1
X
1
Read
Read
Write byte 1 I/O1
I/O8
Write byte 2 I/O9
I/O16
Write byte 2, byte 1
1
0
1
1
1
1
1
1
1
0
1
0
1
1
1
1
1
1
0
1
1
0
1
1
1
1
1
1
0
0
Write byte 3 I/O17
I/O24
Write byte 3, byte 1
Write byte 3, byte 2
Write byte 3, byte 2, byte 1
1
0
1
1
1
1
1
0
1
1
1
1
1
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
1
0
0
0
1
0
Write byte 4, I/O25
I/O32
Write byte 4, byte 1
Write byte 4, byte 2
1
0
1
1
1
1
0
1
1
1
1
1
0
0
1
1
1
1
1
1
1
1
0
0
1
1
1
0
0
1
Write byte 4, byte 2, byte 1
Write byte 4, byte 3
Write byte 4, byte 3, byte 1
1
1
1
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
1
0
0
0
1
1
0
1
0
Write byte 4, byte 3, byte 2
Write byte 4, byte 3, byte 2, byte 1
Write byte 5, I/O33
I/O40
Write byte 5, byte 1
1
1
1
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
1
0
0
1
0
0
1
1
0
1
1
0
1
1
1
0
1
1
1
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W25P243AF-6 | DIODE ZENER QUAD COMMON-ANODE 200mW 20Vz 5mA-Izt 0.05 0.1uA-Ir 14 SOT-363 3K/REEL |
| W25S243A | 64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25S243AD-12 | RECTIFIER FAST-RECOVERY SINGLE 1.5A 100V 50A-ifsm 1.2V-vf 150ns 5uA-ir DO-41 1K/BULK |
| W25S243AF-12 | DIODE SCHOTTKY QUAD SERIES (RAIL CLAMP) 25V 200mW 0.35V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-363 3K/REEL |
| W25S243A-12 | 64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25P243AF-6 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25P40 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI |
| W25P40-VNI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI |
| W25P40-VNIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI |
| W25P40-VSNI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI |
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