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參數資料
型號: W29F201
廠商: WINBOND ELECTRONICS CORP
英文描述: 128K×16bit CMOS Flash Memory(128K×16位CMOS閃速存儲器)
中文描述: × 16位的CMOS 128K的閃存(128K的× 16位的CMOS閃速存儲器)
文件頁數: 1/23頁
文件大小: 266K
代理商: W29F201
Preliminary W29F201
128K
×
16 CMOS FLASH MEMORY
Publication Release Date: December 1998
- 1 -
Revision A1
GENERAL DESCRIPTION
The W29F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K
×
16 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29F201 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations:
5-volt Read/Erase/Program
Fast Program operation:
Word-by-Word programming: 50
μ
S (max.)
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 55/70 nS
Endurance: 1K/10K cycles (min.)
Ten-year data retention
Hardware data protection
Sector configuration
One 8K words boot block with lockout
protection
Two 8K words parameter blocks
One 104K words (208K bytes) Main Memory
Array Blocks
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 44-pin SOP, 48-pin TSOP
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