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參數資料
| 型號： | WMBT3906 |
| 廠商： | 永盛國際集團 |
| 英文描述： | PNP EPITAXIAL SILICON TRANSISTORS |
| 中文描述： | 進步黨外延硅晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 66K |
| 代理商： | WMBT3906 |
PNP EPITAXIAL SILICON TRANSISTORS
W
MBT3906
High Voltage Transistor
!
Power Dissipation: 225mW
!
Collector Current: Max.
0.2A
GUARANTEED PROBED CHARACTERISTICS (T
A
=25
℃
)
Limits
MIN.
Characteristic
Symbol
Test Conditions
MAX.
Units
Collector-emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-off
Current
BV
CEO
I
C
=1mA
40
V
BV
CBO
I
C
=100μA
40
V
BV
EBO
I
E
=10μA
5.0
V
I
CEX
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
BV
ESAT1
BV
ESAT2
V
CE(SAT)1
V
CE(SAT)2
f
T
C
OB
V
CE
=30V, V
BE
=3V
V
CE
=1V, I
C
=100μA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=10mA, I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10, V
CE
=20V f=100MHz
V
CB
=5V, f=1MHz
50
nA
60
80
100
60
30
650
300
DC Current Gain
850
950
250
400
mV
mV
mV
mV
MHz
Base-Emitter
Saturation Voltage
Collector-Emitter
Saturation Voltage
Transition Frequency
Collector-Base
Capacitance
NOTES:
Due to probe testing limitations, only the DC parameters are tested.
250
4.5
PF
SOT
—
23
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
1. BASE
2. EMITTER
3. COLLECTOR
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