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參數(shù)資料
| 型號： | 2N7002DCSM |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
| 中文描述： | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CERAMIC, LCC2, 6 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 28K |
| 代理商： | 2N7002DCSM |
2N7002DCSM
* Pulse width limited by maximum junction temperature.
DUAL N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
V
(BR)DSS
= 60V
RDS
(ON)
= 7.5
I
D
= 0.115A
V
DS
V
GS
I
D
I
DM
P
D
Drain – Source Voltage
Gate – Source Voltage
Drain Current
Pulsed Drain Current *
Power Dissipation
Derate Above
25°C
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Ambient
T
j
T
stg
R
θ
JA
60V
±40V
±0.115A
0.8A
200mW 400mW
1.60mW/
°C
2.0mW/
°C
–55 to 150°C
–55 to 150°C
625
°C/W
250
°C/W
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25°C unless otherwise stated)
CERAMIC
LCC2 PACKAGE
(underside view)
1
2
6
3
4
5
2
(
0
(
0.23
(0.009)
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
rad.
A
1.27 ± 0.13
(0.05 ± 0.005)
A =
6.22 ± 0.13
(0.245 ± 0.005)
4
(
PAD 1 - Drain 1
PAD 2 - Gate 1
PAD 3 - Gate 2
PAD 4 - Drain 2
PAD 5 - Source 2
PAD 6 - Source 1
PER SIDE TOTAL DEVICE
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 6171
Issue 1
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