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參數(shù)資料
| 型號(hào)： | 2SA2124 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | High-Current Switching Applications |
| 中文描述： | 大電流開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 34K |
| 代理商： | 2SA2124 |
2SA2124
No.7920-1/4
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
High current capacity.
High-speed switching.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Conditions
Ratings
Unit
V
V
V
A
A
mA
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
--30
--30
--6
--2
--5
--400
1.3
3.5
150
Collector Dissipation
PC
Mounted on a ceramic board (450mm
2
0.8m)
Tc=25
°
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
hFE(1)
hFE(2)
fT
VCE(sat)
VBE(sat)
VCB=--30V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--100mA
VCE=--2V, IC=--1.5A
VCE=--10V, IC=--300mA
IC=--1.5A, IB=--75mA
IC=--1.5V, IB=--75mA
--0.1
--0.1
560
μ
A
μ
A
DC Current Gain
200
65
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Marking : AX
440
--0.2
--0.95
MHz
V
V
--0.4
--1.2
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7920
D2004EA TS IM TB-00000072
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2124
PNP Epitaxial Planar Silicon Transistors
High-Current Switching Applications
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| 2SA2127 | PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2SA2192 | PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
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| 2SA2196 | PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2124_09 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Current Switching Applications |
| 2SA2124_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Current Switching Applications |
| 2SA2124-S-TD-E | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2124-TD-E | 功能描述:兩極晶體管 - BJT BIP PNP 2A 30V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2125 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications |
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