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參數資料
型號: 2SB1510
廠商: Sanyo Electric Co.,Ltd.
英文描述: PNP Epitaxial Planar Silicon Transistors for 60V/3A Driver Applications(用于60V/3A驅動器應用的PNP硅外延平面型晶體管)
中文描述: 進步黨硅外延平面晶體管驅動器應用的60V/3A(用于60V/3A驅動器應用的新進步黨硅外延平面型晶體管)
文件頁數: 1/4頁
文件大小: 116K
代理商: 2SB1510
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1510/2SD2284
60V/3A Driver Applications
Ordering number:EN3881
N1098HA (KT)/D151MH (KOTO) No.3881–1/4
Package Dimensions
unit:mm
2084
[2SB1510/2SD2284]
C
C
Electrical Characteristics
at Ta = 25C
E : Emitter
C : Collector
B : Base
SANYO : FLP
( ) : 2SB1510
Specifications
Absolute Maximum Ratings
at Ta = 25C
Applications
· Motor drivers, hammer drivers, relay drivers.
Features
· High DC current gain.
· Good dependence of DC current gain.
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相關PDF資料
PDF描述
2SB1530 Silicon PNP Triple Diffused(三倍擴散NPN晶體管)
2SB1559 Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)
2SB1560 Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)
2SB1561 Medium Power Transistor (-60V, -2A, 60V, 2A)
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2SB1548AP 功能描述:TRANS PNP LF 80VCEO 3A TO-220D RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
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