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參數資料
| 型號： | 2SCR523UBTL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UMT3F, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 167K |
| 代理商： | 2SCR523UBTL |
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2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
General purpose transistor(50V,0.1A)
2SCR523M / 2SCR523EB / 2SCR523UB
Structure
Dimensions (Unit : mm)
NPN silicon epitaxial planar transistor
Features
1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB.
Applications
Switch, LED driver
Packaging specifications
Packaging Type
Code
Taping
Basic ordering
unit (pieces)
T2L
8000
Taping
TL
3000
Taping
TL
3000
2SCR523M
2SCR523EB
2SCR523UB
Package
VMT3
EMT3F
UMT3F
Type
Absolute maximum ratings (Ta=25
C)
Inner circuit
Symbol
Limits
Unit
VCBO
50
V
50
V
VCEO
VEBO
5
mA
200
IC
ICP
mA
100
Tj
150
°C
Tstg
55 to +150
°C
PD
200
150
mW
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Range of storage temperature
Power dissipation
1 Pw=1mS Single pulse
2 Each terminal mounted on a recommended land
Parameter
2SCR523M,2SCR523EB
2SCR523UB
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
50
5
350
0.10
1.6
0.1
0.30
V
μA
V
MHz
pF
IC
=50μA
IC
=1mA
IE
=50μA
VCB
=50V
VEB
=5V
IC
=50mA, IB=5mA
hFE
120
560
VCE
=10V, IE=10mA, f=100MHz
VCE
=6V, IC=1mA
VCB
=10V, IE=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
Emitter cut-off current
Collector cut-off current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current gain
VMT3
EMT3F
(1)
(2)
(3)
UMT3F
2.0
0.32
0.65
1.3
2.1
1.25
0.425
(1)
(2)
(3)
0.9
0.53
0.13
Abbreviated symbol : NB
(1)
(3)
(2)
(1) Base
(2) Emitter
(3) Collector
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相關代理商/技術參數 |
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