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參數(shù)資料
| 型號： | 2SK3316 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 424K |
| 代理商： | 2SK3316 |
2SK3316
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK3316
Switching Regulator Applications
Fast reverse recovery time
: trr = 60 ns (typ.)
Built-in high-speed free-wheeling diode
Low drainsource ON resistance
: RDS (ON) = 1.6 (typ.)
High forward transfer admittance
: |Yfs| = 3.8 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
500
V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
3.57
°C / W
Thermal resistance, channel to ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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