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參數資料
| 型號： | 2SK3472 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關穩壓器 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 314K |
| 代理商： | 2SK3472 |
2SK3472
2002-03-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
V
)
2SK3472
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 4.0 m
(typ.)
High forward transfer admittance: |Y
fs
| = 0.8 S (typ.)
Low leakage current: I
DSS
=
1
00 μA (max) (V
DS
= 450 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Tc
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
450
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
450
V
Gate-source voltage
V
GSS
±
30
V
DC
(Note 1)
I
D
1
A
Drain current
Pulse (Note 1)
I
DP
2
A
Drain power dissipation
P
D
20
W
Single pulse avalanche energy
(Note 2)
E
AS
122
mJ
Avalanche current
I
AR
1
A
Repetitive avalanche energy (Note 3)
E
AR
2
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
125
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
203 mH, R
G
=
25
, I
AR
=
1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
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