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參數資料
型號: 48SD3208RPFK
廠商: MAXWELL TECHNOLOGIES
元件分類: DRAM
英文描述: CAP 1.5UF 50V CERAMIC MONO 20%
中文描述: 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
封裝: DFP-72
文件頁數: 23/39頁
文件大小: 589K
代理商: 48SD3208RPFK
48SD3208
M
em
o
ry
3
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
256Mb (8-Meg X 8-Bit X 4-Banks) SDRAM
01.10.05 Rev 2
TABLE 1. ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MAX
UNIT
Voltage on any pin relative to V
SS
V
IN
V
OUT
-0.5 to VCC + 0.5
(< 4.6(max))
V
Supply voltage relative to V
SS
V
CC
-0.5 to +4.6
V
Short circuit output current
I
OUT
50
mA
Power Dissipation
P
D
1.0
W
Thermal Resistance
Tjc
1.5
°C/W
Operating Temperature
T
OPR
-55 to +125
°C
Storage Temperature
T
STG
-65 to +150
°C
TABLE 2. RECOMMENDED OPERATING CONDITIONS
(V
CC = 3.3V + 0.3V, VCCQ = 3.3V + 0.3V, TA = -55 TO 125° C, UNLESS OTHERWISE SPECIFIED)
TABLE 3. DELTA LIMITS
PARAMETER
DESCRIPTION
VARIATION1
1. ±10% of value specified in Table 4
I
CC1
Operational Current
±10%
I
CC2P ICC2PS ICC2N ICC2NS
Power Down Standby Current
±10%
I
CC3P ICC3PS ICC3PN ICC3NS
Active Standby Current
±10%
TABLE 4. DC ELECTRICAL CHARACTERISTICS
(V
CC = 3.3V + 0.3V, VCCQ = 3.3V + 0.3V, TA = -55 TO 125° C, UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
TEST CONDITIONS
SUBGROUPS
MIN
MAX
UNITS
Operating Current1,2,3
I
CC1
Burst length
= 1
t
RC = min
CAS Latency = 2
1, 2, 3
115
mA
CAS Latency = 3
115
Standby Current in Power Down4
I
CC2P
CKE = V
IL
t
CK = 12 ns
1, 2, 3
3
mA
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
VCC, VCCQ1,2
3.0
3.6
V
VSS, VSSQ3
0
V
Input High Voltage
VIH1,4
2.0
VCC + 0.3
V
Input Low Voltage
VIL1,5
-0.3
0.8
V
1.
All voltage referred to VSS
2.
The supply voltage with all
VCC and VCCQ pins must be on the same level
3.
The supply voltage with all VSS and VSSQ pins must be on the same level
4.
VIH (max) = VDD+2.0V for pulse width
<3ns at VCC
5.
VIL (min) = VSS-2.0V for pulse width
<3ns at VSS
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