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參數資料
| 型號： | 61LV25616AL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K × 16高速異步的CMOS靜態RAM為3.3V電源 |
| 文件頁數： | 5/12頁 |
| 文件大小： | 67K |
| 代理商： | 61LV25616AL |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/21/03
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IS61LV25616AL
ISSI
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10
-12
Symbol
Parameter
Test Conditions
Min. Max.
Min. Max.
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
—
—
100
110
—
—
90
100
mA
I
SB
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = f
MAX
.
Com.
Ind.
—
—
50
55
—
—
45
50
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
Com.
Ind.
—
—
20
25
—
—
20
25
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
15
20
—
—
15
20
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Shaded area product in development
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