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| 型號(hào)： | AD8018 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | RESISTOR-FIXED, METAL |
| 中文描述： | 5伏，軌到軌，高輸出電流，xDSL線路驅(qū)動(dòng)器放大器 |
| 文件頁(yè)數(shù)： | 3/19頁(yè) |
| 文件大?。?/td> | 339K |
| 代理商： | AD8018 |
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REV. 0
–3–
AD8018
Parameter
Conditions
Min
Typ
Max
Unit
LOGIC INPUTS (PWDN1, 0)
Logic “1” Voltage
Logic “0” Voltage
Logic Input Bias Current
Standby Recovery Time
2.0
V
V
0.8
240
500
A
R
L
= 10
, G = +2, I
S
= 90% of Typical
ns
Specifications subject to change without notice.
ORDERING GUIDE
Temperature
Range
Package
Description
Package
Option
Model
AD8018AR
–40
°
C to +85
°
C 8-Lead Plastic
SO-8
SOIC
AD8018AR–REEL
AD8018ARU
–40
°
C to +85
°
C 8-Lead SOIC
–40
°
C to +85
°
C 14-Lead Plastic
SO-8
RU-14
TSSOP
AD8018ARU–REEL –40
°
C to +85
°
C 14-Lead Plastic
RU-14
TSSOP
Evaluation Board RU-14
AD8018ARU–EVAL
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 650 mW
TSSOP Package (RU) . . . . . . . . . . . . . . . . . . . . . . 565 mW
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . .
±
V
S
Logic Voltage, PWDN0, 1 . . . . . . . . . . . . . . . . . . . . . . . . .
±
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±
1.6 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range RU, R . . . . . . . –65
°
C to +125
°
C
Operating Temperature Range . . . . . . . . . . . –40
°
C to +85
°
C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300
°
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for the device in free air:
8-Lead SOIC Package:
θ
JA
= 100
°
C/W.
8-Lead TSSOP Package:
θ
JA
= 115
°
C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8018
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150
°
C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change
in the stresses exerted on the die by the package. Exceeding a
junction temperature of 175
°
C for an extended period can result
in device failure.
While the AD8018 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tempera-
ture (150
°
C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.
AMBIENT TEMPERATURE
–
C
2.0
–
50
M
–
1.5
1.0
0.5
0
–
40
–
30
–
20
–
10 0
10
20 30
40 50
60 70
80 90
T
J
= 150 C
14-LEAD TSSOP PACKAGE
8-LEAD SOIC PACKAGE
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8018 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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