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參數(shù)資料
| 型號(hào)： | AD8137YRZ-REEL7 |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | Low Cost, Low Power 12-Bit Differential ADC Driver |
| 中文描述： | OP-AMP, 2600 uV OFFSET-MAX, PDSO8 |
| 封裝： | ROHS COMPLIANT, MS-012AA, SOIC-8 |
| 文件頁(yè)數(shù)： | 6/24頁(yè) |
| 文件大小： | 594K |
| 代理商： | AD8137YRZ-REEL7 |
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AD8137
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
V
OCM
Power Dissipation
Input Common-Mode Voltage
Storage Temperature
Operating Temperature Range
Lead Temperature Range
(Soldering 10 sec)
Junction Temperature
Rev. A | Page 6 of 24
Rating
12 V
V
S+
to V
S
See Figure 3
V
S+
to V
S
65°C to +125°C
40°C to +125°C
300°C
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, i.e., θ
JA
is specified
for the device soldered in a circuit board in still air.
Table 5. Thermal Resistance
Package Type
θ
JA
SOIC-8/2-Layer
157
SOIC-8/4-Layer
125
LFCSP/4-Layer
70
Maximum Power Dissipation
The maximum safe power dissipation in the AD8137 package is
limited by the associated rise in junction temperature (T
J
) on
the die. At approximately 150°C, which is the glass transition
temperature, the plastic will change its properties. Even tempo-
rarily exceeding this temperature limit may change the stresses
that the package exerts on the die, permanently shifting the
parametric performance of the AD8137. Exceeding a junction
temperature of 175°C for an extended period of time can result
in changes in the silicon devices potentially causing failure.
θ
JC
56
56
56
Unit
°C/W
°C/W
°C/W
The power dissipated in the package (P
D
) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (V
S
) times the
quiescent current (I
S
). The load current consists of differential
and common-mode currents flowing to the load, as well as
currents flowing through the external feedback networks and
the internal common-mode feedback loop. The internal resistor
tap used in the common-mode feedback loop places a 1 k
differential load on the output. RMS output voltages should be
considered when dealing with ac signals.
Airflow reduces θ
JA
. Also, more metal directly in contact with
the package leads from metal traces, through holes, ground, and
power planes will reduce the θ
JA
.
Figure 3 shows the maximum safe power dissipation in the
package versus the ambient temperature for the SOIC-8
(125°C/W) and LFCSP (θ
JA
= 70°C/W) package on a JEDEC
standard 4-layer board. θ
JA
values are approximations.
–40
–20–10
–30
0
10 20 30 40 50 60 70 80 90 100110120
AMBIENT TEMPERATURE (°C)
3.0
M
1.0
1.5
0.5
2.0
2.5
0
SOIC-8
LFCSP
0
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features proprie-
tary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic
discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of
functionality.
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