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參數資料
| 型號： | ADP3179JRU |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 穩壓器 |
| 英文描述： | PRECISION THERMOSTATS |
| 中文描述： | SWITCHING CONTROLLER, PDSO20 |
| 封裝： | TSSOP-20 |
| 文件頁數： | 9/16頁 |
| 文件大小： | 231K |
| 代理商： | ADP3179JRU |
REV. A
ADP3159/ADP3179
–9–
The current comparator threshold sets the peak of the inductor
current yielding a maximum output current, I
O
, which equals
twice the peak inductor current value less half of the peak-to-
peak inductor ripple current. From this the maximum value of
R
SENSE
is calculated as:
R
V
I
I
mV
+
1 9
A
A
m
SENSE
CS CL
(
MIN
O
L RIPPLE
(
2
≤
+
=
=
)(
)
)
.
69
15
4
(8)
In this case, 4 m
was chosen as the closest standard value.
Once R
SENSE
has been chosen, the output current at the point
where current limit is reached, I
OUT(CL)
, can be calculated using
the maximum current sense threshold of 87 mV:
V
R
mV
m
4
2
At output voltages below 450 mV, the current sense threshold is
reduced to 54 mV, and the ripple current is negligible. There-
fore, at dead short the output current is reduced to:
I
I
A
A
OUT CL
CS CL
(
MAX
SENSE
3 8
L RIPPLE
(
2
(
)
)(
)
)
–
–
.
=
=
≈
87
20
(9)
I
mV
m
A
OUT SC
(
)
.
=
=
54
4
13 5
(10)
To safely carry the current under maximum load conditions, the
sense resistor must have a power rating of at least:
P
I
R
R
O
SENSE
×
=
(
)
A
m
W
SENSE
=
×
=
(
)
.
2
2
20
4
1 6
(11)
Power MOSFETs
Two external N-channel power MOSFETs must be selected for
use with the ADP3159, one for the main switch and an identical
one for the synchronous switch. The main selection parameters
for the power MOSFETs are the threshold voltage (V
GS(TH)
) and
the ON-resistance (R
DS(ON)
).
The minimum input voltage dictates whether standard threshold
or logic-level threshold MOSFETs must be used. For V
IN
> 8 V,
standard threshold MOSFETs (V
GS(TH)
< 4 V) may be used. If
V
IN
is expected to drop below 8 V, logic-level threshold MOSFETs
(V
GS(TH)
< 2.5 V) are strongly recommended. Only logic-level
MOSFETs with V
GS
ratings higher than the absolute maximum
value of V
CC
should be used.
The maximum output current I
O(MAX)
determines the R
DS(ON)
requirement for the two power MOSFETs. When the ADP3159
is operating in continuous mode, the simplifying assumption can
be made that one of the two MOSFETs is always conducting
the average load current. For V
IN
= 5 V and V
OUT
= 1.65 V, the
maximum duty ratio of the high-side FET is:
D
f
t
D
kHz
s
HSF MAX
(
MIN
195
OFF
×
HSF MAX
(
)
)
–
(
)
–
.
%
=
=
×
μ
(
)
=
1
1
3 3
36
(12)
The maximum duty ratio of the low-side (synchronous rectifier)
MOSFET is:
D
The maximum rms current of the high-side MOSFET is:
D
LSF MAX
(
HSF MAX
(
)
)
–
%
=
=
1
54
(13)
The maximum rms current of the low-side MOSFET is:
I
D
I
I
I
I
I
A
A
A
A
A rms
RMSHSF
HSF MAX
(
L VALLEY
(
L VALLEY
(
L PEAK
(
L PEAK
(
RMSHSF
=
×
+
×
+
=
×
+
×
3
+
=
)
)
)
)
)
(
)
%
.
(
.
.
)
.
.
2
2
2
2
3
36
13 1
13 1
16 1
16 1
8 8
(14)
The R
DS(ON)
for each MOSFET can be derived from the allowable
dissipation. If 10% of the maximum output power is allowed for
MOSFET dissipation, the total dissipation will be:
P
Allocating half of the total dissipation for the high-side MOSFET
and half for the low-side MOSFET and assuming that switching
losses are small relative to the dc conduction losses, the required
minimum MOSFET resistances will be:
I
D
I
I
I
I
I
A
A
A
A
A rms
RMSLSF
LSF MAX
(
L VALLEY
(
L VALLEY
(
L PEAK
(
L PEAK
(
RMSLSF
=
×
+
×
+
=
×
+
×
3
+
=
)
)
)
)
)
%
.
(
.
.
)
.
.
2
2
2
2
3
54
13 1
13 1
16 1
16 1
10 8
(15)
V
I
W
D FETs
(
OUT
OUT MAX
(
)
)
.
.
=
×
×
=
0 1
2 26
(16)
R
P
I
W
A
m
DS ON HSF
(
HSF
HSF
)
.
8 8
.
≤
=
=
2
2
1 13
15
(17)
R
P
I
W
A
m
DS ON LSF
(
LSF
LSF
)
.
.
≤
=
=
2
2
1 13
10 8
10
(18)
Note that there is a trade-off between converter efficiency and
cost. Larger MOSFETs reduce the conduction losses and allow
higher efficiency, but increase the system cost. If efficiency is not a
major concern, a Vishay-Siliconix SUB45N03-13L (R
DS(ON)
=
10 m
nominal, 16 m
worst-case) for the high-side and a
Vishay-Siliconix SUB75N03-07 (R
DS(ON)
= 6 m
nominal,
10 m
worst-case) for the low-side are good choices.
The high-side MOSFET dissipation is:
where the second term represents the turn-off loss of the
MOSFET. In the second term, Q
G
is the gate charge to be removed
from the gate for turn-off and I
G
is the gate current. From the
data sheet, Q
G
is 70 nC and the gate drive current provided by
the ADP3159 is about 1 A.
The low-side MOSFET dissipation is:
P
I
R
V
I
Q
f
I
P
A
m
V
A
nC
A
kHz
W
DHSF
RMSHSF
DS ON
(
IN
L PEAK
(
G
MIN
G
DHSF
=
×
+
×
×
×
×
=
×
+
×
×
2 1
×
=
2
2
2
8 8
.
16
5
15
70
195
1 75
.
)
)
(19)
P
P
I
10 8
R
10
A
m
W
DLSF
RMSLSF
.
DS ON
(
DLSF
=
=
×
×
=
2
2
1 08
.
)
(20)
Note that there are no switching losses in the low-side MOSFET.
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