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參數(shù)資料
| 型號(hào)： | AP4413GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 7.8 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | AP4413GM |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-7A
-
30
mΩ
VGS=-4.5V, ID=-4A
-
40
mΩ
VGS=-2.5V, ID=-2A
-
65
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5
-
-1.5
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
16
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-20V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-16V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=-7A
-
17
27
nC
Qgs
Gate-Source Charge
VDS=-16V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
7
-
nC
td(on)
Turn-on Delay Time
2
VDS=-10V
-
12
-
ns
tr
Rise Time
ID=-2A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
40
-
ns
tf
Fall Time
RD=10Ω
-13
-
ns
Ciss
Input Capacitance
VGS=0V
-
1140
1820
pF
Coss
Output Capacitance
VDS=-25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
210
-
pF
Rg
Gate Resistance
f=1.0MHz
-
4.3
-
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-2A, VGS=0V
-
-1.2
V
t
rr
Reverse Recovery Time
2
IS=-7A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
22
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
AP4413GM
±20V
±100
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4413M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4415GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4416GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
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