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參數資料
| 型號： | AP4413GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 7.8 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數： | 3/4頁 |
| 文件大小： | 70K |
| 代理商： | AP4413GM |
AP4413GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
20
40
60
80
100
120
01
234
56
78
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
T A =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G = - 2.5 V
0
10
20
30
40
50
60
70
80
90
012345678
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
-10V
-7.0V
-5.0V
-4.5V
V G = - 2.5 V
T A = 150
o C
10
20
30
40
50
60
70
135
79
11
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
ΩΩΩΩ
)
I D =-4 A
T A =25 ℃
℃
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(
ON)
I D =-7 A
V G =-10V
0
1
2
3
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS(
th)
(V
)
0
1
2
3
4
5
6
7
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S
(A
)
T j =25
o C
T j =150
o C
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| AP4435GH | 40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP4435GM-HF | 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP4413M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4415GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4416GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
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