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參數(shù)資料
| 型號： | AP4435GM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 202K |
| 代理商： | AP4435GM-HF |
AP4435GM-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
50
01
234
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0V
0
10
20
30
40
50
0246
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
V G = -3.0V
-10V
-7.0V
-5.0V
-4.5V
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D = -7A
V G = -10V
0
2
4
6
8
10
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0.8
1
1.2
1.4
1.6
1.8
2
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS(t
h)
(V
)
12
16
20
24
28
32
24
68
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D = -5A
T A =25
o C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4435GYT-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
| AP4435M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4436GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
| AP4437GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower On-resistance |
| AP4438AGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
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