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參數(shù)資料
| 型號(hào)： | APTM50UM19S |
| 元件分類： | JFETs |
| 英文描述： | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 286K |
| 代理商： | APTM50UM19S |
APTM50UM19S
A
PT
M
50U
M
19S
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 7
D
Q1
G
S
CR1
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
163
ID
Continuous Drain Current
Tc = 80°C
122
IDM
Pulsed Drain current
652
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
19
m
W
PD
Maximum Power Dissipation
Tc = 25°C
1136
W
IAR
Avalanche current (repetitive and non repetitive)
46
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 500V
RDSon = 19m max @ Tj = 25°C
ID = 163A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Low stray inductance
-
M6 power connectors
-
M4 signal connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Single switch
Series & parallel diodes
MOSFET Power Module
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