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參數資料
| 型號： | ATF-58143-BLK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數： | 4/10頁 |
| 文件大小： | 179K |
| 代理商： | ATF-58143-BLK |
ATF-58143 Electrical Specifications
T
A = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.[2]
Max.
Vgs
Operational Gate Voltage
Vds = 3V, Ids = 30 mA
V
0.4
0.51
0.75
Vth
Threshold Voltage
Vds = 3V, Ids = 4 mA
V
0.18
0.38
0.52
Idss
Saturated Drain Current
Vds = 3V, Vgs = 0V
A
—
1
5
Gm
Transconductance
Vds = 3V,
mmho
230
410
560
gm =
Idss/Vgs;
Vgs = 0.75 –0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = 3V
A
—
200
NF
Noise Figure[1]
f = 2 GHz
Vds = 3V, Ids = 30 mA
dB
—
0.5
0.9
f = 900 MHz
Vds = 3V, Ids = 30 mA
dB
—
0.3
—
f = 2 GHz
Vds = 4V, Ids = 30 mA
dB
—
0.5
—
f = 900 MHz
Vds = 4V, Ids = 30 mA
dB
—
0.3
—
Ga
Associated Gain[1]
f = 2 GHz
Vds = 3V, Ids = 30 mA
dB
15
16.5
18.5
f = 900 MHz
Vds = 3V, Ids = 30 mA
dB
—
23.1
—
f = 2 GHz
Vds = 4V, Ids = 30 mA
dB
—
17.7
—
f = 900 MHz
Vds = 4V, Ids = 30 mA
dB
—
22.5
—
OIP3
Output 3rd Order
f = 2 GHz
Vds = 3V, Ids = 30 mA
dBm
29
30.5
—
Intercept Point[1]
f = 900 MHz
Vds = 3V, Ids = 30 mA
dBm
—
28.6
—
f = 2 GHz
Vds = 4V, Ids = 30 mA
dBm
—
31.5
—
f = 900 MHz
Vds = 4V, Ids = 30 mA
dBm
—
31.0
—
P1dB
1dB Compressed
f = 2 GHz
Vds = 3V, Ids = 30 mA
dBm
—
19
—
Output Power[1]
f = 900 MHz
Vds = 3V, Ids = 30 mA
dBm
—
18
—
f = 2 GHz
Vds = 4V, Ids = 30 mA
dBm
—
21
—
f = 900 MHz
Vds = 4V, Ids = 30 mA
dBm
—
19
—
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 3 wafers.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses.
RFin
RFout
output
matching
0.7 dB loss
input
matching
0.6 dB loss
28.2 + j9.4
51 – j3.3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-58143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-58143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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