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參數資料
| 型號： | ATF-58143-BLK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數： | 7/10頁 |
| 文件大小： | 179K |
| 代理商： | ATF-58143-BLK |
ATF-58143 Typical Scattering Parameters, V
DS = 3V, IDS = 30 mA
Freq.
S
11
S
21
S
12
S
22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.98
17.1
27.29
23.14
168.7
40.10
0.010
80.8
0.67
12.1
33.69
0.5
0.81
92.0
25.25
18.31
123.7
28.10
0.039
45.7
0.42
46.6
26.68
0.9
0.75
126.4
21.87
12.40
103.4
26.12
0.049
34.8
0.32
66.7
23.99
1.0
0.73
132.2
21.18
11.46
99.8
25.87
0.051
33.4
0.31
72.3
23.52
1.5
0.69
153.2
18.38
8.31
85.1
24.70
0.058
29.4
0.25
90.8
21.54
1.9
0.66
165.9
16.74
6.88
75.4
23.86
0.064
27.4
0.23
103.6
20.30
2.0
0.65
169.3
16.40
6.61
73.1
23.65
0.066
26.9
0.22
106.0
20.03
2.5
0.63
176.3
14.83
5.51
61.9
22.71
0.073
24.4
0.19
118.1
18.77
3.0
0.61
160.7
13.51
4.74
50.9
21.87
0.081
21.1
0.17
133.3
17.69
3.5
0.61
147.4
12.35
4.15
40.4
21.10
0.088
17.7
0.15
145.4
16.73
4.0
0.62
133.8
11.28
3.66
30.2
20.45
0.095
13.5
0.13
155.7
15.86
4.5
0.64
123.7
10.32
3.28
20.5
19.86
0.102
9.3
0.13
175.4
15.09
5.0
0.66
112.5
9.41
2.96
11.1
19.39
0.107
4.9
0.13
166.2
14.40
5.5
0.68
103.7
8.61
2.70
2.1
18.87
0.114
0.7
0.14
152.8
13.74
6.0
0.69
93.0
7.84
2.47
7.3
18.44
0.120
4.4
0.14
140.7
13.14
7.0
0.71
77.2
6.47
2.11
24.8
17.63
0.131
14.6
0.17
120.7
12.06
8.0
0.74
58.3
5.14
1.81
43.1
17.13
0.139
26.1
0.19
95.4
11.14
9.0
0.78
39.7
3.77
1.54
60.7
16.67
0.147
37.0
0.24
70.1
10.22
10.0
0.84
25.1
2.55
1.34
78.8
16.21
0.155
50.2
0.34
52.4
9.39
11.0
0.87
10.2
1.25
1.16
97.1
16.04
0.158
64.2
0.41
37.3
8.65
12.0
0.89
3.9
0.19
1.02
114.0
15.72
0.164
78.3
0.46
21.5
7.96
13.0
0.90
20.0
1.09
0.88
132.2
15.86
0.161
93.6
0.52
2.5
7.39
14.0
0.93
31.4
2.53
0.75
148.3
16.22
0.154
106.5
0.58
14.1
6.85
15.0
0.96
43.9
4.00
0.63
162.8
16.73
0.146
118.2
0.66
26.0
6.36
16.0
0.94
54.2
5.46
0.53
176.5
17.15
0.139
128.6
0.72
36.3
5.85
17.0
0.96
65.1
7.14
0.44
168.6
17.68
0.131
142.4
0.74
49.0
5.27
18.0
0.93
79.8
8.81
0.36
153.8
18.36
0.121
155.6
0.77
64.8
4.77
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.12
0.39
17.775
0.04
25.33
0.9
0.18
0.37
46.9
0.04
22.26
1.0
0.20
0.36
53.525
0.04
21.54
1.5
0.32
80
0.04
19.16
1.9
0.43
0.30
101
0.04
17.65
2.0
0.45
0.30
107.7
0.04
17.33
2.4
0.51
0.29
125.2
0.04
16.23
3.0
0.58
0.31
154.475
0.05
14.77
3.9
0.75
0.35
156.95
0.06
13.39
5.0
0.87
0.42
120.93
0.09
11.92
5.8
1.01
0.50
100.83
0.15
11.07
6.0
1.04
0.53
97.15
0.18
10.93
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a
set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements F
min is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, V
DS = 3V, IDS = 30 mA
Figure 19. MSG/MAG and S21 vs. Frequency
at 3V, 30 mA.
FREQUENCY (GHz)
MSG/MAG
and
S
21
(dB)
0
20
10
15
5
40
35
30
25
20
15
10
5
0
-5
-10
-15
S21
MSG
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-58143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-58143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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