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參數資料
| 型號： | AV5401 |
| 廠商： | Avic Technology |
| 英文描述： | PNP EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | 進步黨外延硅晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 79K |
| 代理商： | AV5401 |
@vic
AV
5401
PNP EPITAXIAL SILICON TRANSISTOR
QW-R201-001,A
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
V
CEO
=-150V
*Collector Dissipation:
Pc(max)=625mW
*High current gain
APPLICATIONS
*Telephone Switching Circuit
*Amplifier
1:EMITTER 2:BASE 3:COLLECTOR
TO-92
1
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C,unless otherwise specified)
PARAMETER
SYMBOL
Collector-base breakdown voltage
BV
CBO
Collector-emitter breakdown voltage
BV
CEO
Emitter-base breakdown voltage
BV
EBO
Collector cut-off current
I
CBO
Emitter cut-off current
I
EBO
DC current gain(note)
hFE1
hFE2
hFE3
Collector-emitter saturation voltage
V
CE
(sat)
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
RATING
-160
-150
-5
625
-600
150
-55 ~ +150
UNIT
V
V
V
mW
mA
°
C
°
C
TEST CONDITIONS
Ic=-100
μ
A,I
E
=0
Ic=-1mA,I
B
=0
I
E
=-10
μ
A,Ic=0
V
CB
=-120V,I
E
=0
V
EB
=-3V,Ic=0
V
CE
=-5V,Ic=-1mA
V
CE
=-5V,Ic=-10mA
V
CE
=-5V,Ic=-50mA
Ic=-10mA,I
B
=-1mA
Ic=-50mA,I
B
=-5mA
Ic=-10mA,I
B
=-1mA
Ic=-50mA,I
B
=-5mA
V
CE
=-10V,Ic=-10mA,f=100MHz
MIN
-160
-150
-6
80
80
80
TYP
MAX
-50
-50
400
UNIT
V
V
V
nA
nA
-0.2
-0.5
-1
-1
400
V
Base-emitter saturation voltage
V
BE
(sat)
V
Current gain bandwidth product
f
T
100
MHz
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