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參數(shù)資料
型號: BUK7107-40ATC
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchPLUS standard level FET
中文描述: 75 A, 40 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-5
文件頁數(shù): 1/15頁
文件大小: 230K
代理商: BUK7107-40ATC
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
Rev. 02 — 6 February 2009
Product data sheet
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
clamping and temperature sensing. This product has been designed and qualified to the
appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Low conduction losses due to low
on-state resistance
Q101 compliant
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
[1]
Voltage is limited by clamping.
[2]
Continuous current is limited by package.
Quick reference
Parameter
drain-source voltage
drain current
Conditions
T
j
25 °C; T
j
175 °C;
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 2
; see
Figure 3
;
Min
-
-
Typ
-
-
Max
40
75
Unit
V
A
[1]
[2]
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 10 V; I
D
= 50 A;
T
j
= 25 °C; see
Figure 7
;
see
Figure 8
I
F
= 250 μA; T
j
> -55 °C;
T
j
< 175 °C
-
5.8
7
m
S
F(TSD)
temperature sense
diode temperature
coefficient
temperature sense
diode forward
voltage
-1.4
-1.54
-1.68
mV/K
V
F(TSD)
I
F
= 250 μA; T
j
= 25 °C
648
658
668
mV
V
F(TSD)hys
temperature sense
diode forward
voltage hysteresis
I
F
< 250 μA; T
j
= 25 °C;
I
F
> 125 μA
25
32
50
mV
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參數(shù)描述
BUK7107-40ATC /T3 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7107-40ATC,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7107-55AIE 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchPLUS standard level FET
BUK7107-55AIE /T3 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7107-55AIE,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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