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參數資料
| 型號： | BULD118D-1 |
| 廠商： | 意法半導體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor(高壓快速開關NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開關晶體管（高壓快速開關npn型功率晶體管） |
| 文件頁數： | 1/7頁 |
| 文件大小： | 71K |
| 代理商： | BULD118D-1 |
BULD118D-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
I
HIGH VOLTAGECAPABILITY
I
LOW SPREADOF DYNAMIC PARAMETERS
I
MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
I
VERYHIGH SWITCHING SPEED
APPLICATIONS:
I
ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
I
FLYBACKAND FORWARD SINGLE
TRANSISTOR LOWPOWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi
Epitaxial
Planar
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
technology
for
high
INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
700
400
9
2
4
1
2
20
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
3
2
1
IPAK
(TO-251)
1/7
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BULD118D-1_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BULD125KC | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD128DA1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251AA |
| BULD128DB1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251AA |
| BULD128DT4 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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