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參數(shù)資料
| 型號： | CM600HA-5F |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts |
| 中文描述： | 600 A, 250 V, N-CHANNEL IGBT |
| 封裝： | MODULE-4 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 45K |
| 代理商： | CM600HA-5F |
Sep.1998
Dimensions
Inches
Millimeters
A
4.25
108.0
B
3.66
93.0
±
0.25
C
0.63
16.0
D
0.30
7.5
E
0.69
17.5
F
1.14
29.0
G
0.79
20.0
H
0.94
24.0
J
0.31
7.9
K
0.24
6.0
L
2.44
62.0
M
1.89
48.0
Dimensions
Inches
Millimeters
N
0.39
10.0
P
0.39
10.0
Q
0.51
13.0
R
0.33
8.5
S
1.42
36.0
T
1.02
25.8
U
M6 Metric
M6
V
M4 Metric
M4
W
0.26
Dia. 6.5
X
0.79
20.0
Y
0.35
9.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
one IGBT in a single configura-
tion, with a reverse connected su-
per-fast recovery free-wheel di-
ode. All components and intercon-
nects are isolated from the heat
sinking baseplate, offering simpli-
fied system assembly and thermal
management.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast
Recovery
Free-Wheel Diodes
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Applications:
u
UPS
u
Forklift
Ordering Information:
Example: Select the complete
nine digit module part number you
desire from the table below - i.e.
CM600HA-5F is a 250V (V
CES
),
600 Ampere Single IGBT Module.
Current Rating
Amperes
V
CES
Volts (x 50)
Type
CM
600
5
MITSUBISHI IGBT MODULES
CM600HA-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
C
G
E
E
E
E
G
C
A
B
C
F
K
J
E
D
M
N
P
Q
R
S
U - THD.
(2 TYP.)
V -THD.
(2 TYP.)
W - DIA. (4 TYP.)
y
x
T
L
H
G
+1.0
–0.5
+1.0
–0.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CM600HN-5F | HIGH POWER SWITCHING USE |
| CM600HU-12F | HIGH POWER SWITCHING USE |
| CM600HU-12F | Trench Gate Design Single IGBTMOD⑩ 600 Amperes/600 Volts |
| CM600HU-12H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HU-12H | Single IGBTMOD 600 Amperes/600 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM600HA-5F_00 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HB-24A | 功能描述:IGBT MOD SGL 1200V 600A A SER RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM600HB-90H | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM600HB-90H_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HG-130H | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
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