| 型號 | 廠商 | 描述 |
| k3413-05 2 3 |
Hamamatsu Photonics | Two-color detector |
| k3413-08 2 3 |
Hamamatsu Photonics | Two-color detector |
| k3413-09 2 3 |
Hamamatsu Photonics | Two-color detector |
| k3nc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Omron Electronics LLC | Up/Down Counting Meter |
| k3nc-nb1a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Omron Electronics LLC | Up/Down Counting Meter |
| k3nc-nb1c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Omron Electronics LLC | Up/Down Counting Meter |
| k3nc-nb2a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Omron Electronics LLC | Up/Down Counting Meter |
| k3nc-nb2c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Omron Electronics LLC | Up/Down Counting Meter |
| k3nc-pb1a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Omron Electronics LLC | Up/Down Counting Meter |
| k3nc-pb1c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Omron Electronics LLC | Up/Down Counting Meter |
| k3nc-pb2a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Omron Electronics LLC | Up/Down Counting Meter |
| k3nc-pb2c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Omron Electronics LLC | Up/Down Counting Meter |
| k3s7v2000m-tc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM |
| k3s7v2000m-tc10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM |
| k3s7v2000m-tc12 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM |
| k3s7v2000m-tc15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM |
| k3s7v2000m-tc20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM |
| k3s7v2000m-tc30 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM |
| k4032 2 |
Electronic Theatre Controls, Inc. | Vestigial Sideband Filter (IF= 38,0 MHz, standard D, full transmission ) |
| k4b1g0446c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb C-die DDR3 SDRAM Specification |
| k4b1g0446c-cf8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb C-die DDR3 SDRAM Specification |
| k4b1g0446c-zcf7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb C-die DDR3 SDRAM Specification |
| k4b1g0446c-zcg9 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb C-die DDR3 SDRAM Specification |
| k4b1g0846c-cf8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb C-die DDR3 SDRAM Specification |
| k4b1g0846c-zcf7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb C-die DDR3 SDRAM Specification |
| k4b1g0846c-zcg9 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb C-die DDR3 SDRAM Specification |
| k4b1g1646c-cf8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb C-die DDR3 SDRAM Specification |
| k4b1g1646c-zcf7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb C-die DDR3 SDRAM Specification |
| k4b1g1646c-zcg9 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb C-die DDR3 SDRAM Specification |
| k4c560838c-tcd3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb Network-DRAM |
| k4c560838c-tcd4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 150uF; Voltage: 200V; Case Size: 16x31.5 mm; Packaging: Bulk |
| k4c560838c-tcda 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk |
| k4c561638c-tcd3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb Network-DRAM |
| k4c561638c-tcd4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| k4c561638c-tcd4000 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk |
| k4c561638c-tcda 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb Network-DRAM |
| k4c89323af-gcf5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89323af-gcf6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89323af-gcfb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89323af-tcf5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89323af-tcf6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89323af-tcfb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89363af 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89363af-gcf5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89363af-gcf6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89363af-gcfb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89363af-tcf5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89363af-tcf6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4c89363af-tcfb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| k4d261638e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |