| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SIS454DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 1212-8 PPAK | 6,000 | 3,000:$0.40600 6,000:$0.38570 15,000:$0.36975 30,000:$0.35960 75,000:$0.34800 |
| SI7621DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1212-8 PPAK | 3,000 | 1:$0.73000 25:$0.56120 100:$0.49500 250:$0.42900 500:$0.36300 1,000:$0.28875 |
| SI7621DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1212-8 PPAK | 0 | 3,000:$0.23925 6,000:$0.22275 15,000:$0.21450 30,000:$0.20625 75,000:$0.20295 150,000:$0.19800 |
| SI4156DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 5,184 | 1:$1.03000 25:$0.81000 100:$0.72900 250:$0.63452 500:$0.56700 1,000:$0.44550 |
| SI3475DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 200V 6-TSOP | 3,000 | 3,000:$0.37800 6,000:$0.35910 15,000:$0.34425 30,000:$0.33480 75,000:$0.32400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 35A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 3.7 毫歐 @ 20A，10V |
| Id 時的 Vgs(th)（最大）: | 2.2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 53nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1900pF @ 10V |
| 功率 - 最大: | 52W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? 1212-8 |
| 包裝: | 帶卷 (TR) |