| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSC014NE2LSI | Infineon Technologies | MOSFET N-CH 25V 33A TDSON-8 | 6,783 | 1:$2.23000 10:$1.91000 25:$1.71920 100:$1.55990 250:$1.40076 500:$1.20974 1,000:$1.01872 2,500:$0.92322 |
| BSC014NE2LSI | Infineon Technologies | MOSFET N-CH 25V 33A TDSON-8 | 5,000 | 5,000:$0.82771 10,000:$0.79588 25,000:$0.77996 50,000:$0.76404 |
| IPD250N06N3 G | Infineon Technologies | MOSFET N-CH 60V 28A TO252-3 | 4,820 | 1:$0.96000 10:$0.82500 25:$0.73800 100:$0.65130 250:$0.56448 500:$0.47762 1,000:$0.37993 |
| IPD250N06N3 G | Infineon Technologies | MOSFET N-CH 60V 28A TO252-3 | 4,820 | 1:$0.96000 10:$0.82500 25:$0.73800 100:$0.65130 250:$0.56448 500:$0.47762 1,000:$0.37993 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 25V |
| 電流 - 連續漏極(Id) @ 25° C: | 100A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 1.4 毫歐 @ 30A，10V |
| Id 時的 Vgs(th)（最大）: | 2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 39nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2700pF @ 12V |
| 功率 - 最大: | 74W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應商設備封裝: | PG-TDSON-8 |
| 包裝: | 剪切帶 (CT) |