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參數(shù)資料
| 型號(hào)： | FCX1151A |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP SILICON POWER (SWITCHING) TRANSISTOR |
| 中文描述： | 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-89, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 49K |
| 代理商： | FCX1151A |
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-45
V
I
C
=-100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CES
-40
V
I
C
=-100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-40
V
I
C
=-10mA
Collector-Emitter
Breakdown Voltage
V
(BR)CEV
-40
V
I
C
=-100
μ
A, V
EB
=+1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
-0.3
-100
nA
V
CB
=-36V
Emitter Cut-Off Current
I
EBO
-0.3
-100
nA
V
EB
=-4V
Collector Emitter Cut-Off
Current
I
CES
-0.3
-100
nA
V
CE
=-32V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-60
-120
-140
-200
-90
-180
-220
-300
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-1.0mA*
I
C
=-0.5A, I
=-5mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-3A, I
B
=-250mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-985
-1050
mV
I
C
=-3A, I
B
=-250mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-850
-950
mV
I
C
=-3A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
270
250
180
100
450
400
300
190
45
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
Transition Frequency
f
T
145
MHz
I
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
cb
40
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
170
ns
I
C
=-2A, I
B
=-20mA,
V
CC
=-30V
t
off
460
ns
I
C
=-2A, I
B
=
±
20mA,
V
CC
=-30V
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
FCX1151A
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