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參數(shù)資料
型號: FDA18N50
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 500V N-Channel MOSFET
中文描述: 19 A, 500 V, 0.265 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3P, 3 PIN
文件頁數(shù): 1/8頁
文件大小: 741K
代理商: FDA18N50
2006 Fairchild Semiconductor Corporation
FDA18N50 Rev. A
1
www.fairchildsemi.com
F
October 2006
UniFET
TM
FDA18N50
500V N-Channel MOSFET
Features
19A, 500V, R
DS(on)
= 0.265
@V
GS
= 10 V
Low gate charge ( typical 45 nC)
Low C
rss
( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
G
S
D
TO-3P
FDA Series
Symbol
Parameter
FDA18N50
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
19
11.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
76
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
945
mJ
Avalanche Current
(Note 1)
19
A
Repetitive Avalanche Energy
(Note 1)
23
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
239
1.92
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.52
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.24
--
°
C/W
Thermal Resistance, Junction-to-Ambient
--
40
°
C/W
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