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參數資料
| 型號： | FDA33N25 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel MOSFET |
| 中文描述： | 33 A, 250 V, 0.094 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3PN, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 607K |
| 代理商： | FDA33N25 |
tm
September 2007
UniFET
F
2007 Fairchild Semiconductor Corporation
FDA33N25 Rev. A
www.fairchildsemi.com
1
TM
FDA33N25
N-Channel MOSFET
250V, 33A, 0.094
Features
R
DS(on)
= 0.088
( Typ.)@ V
GS
= 10V, I
D
= 16.5A
Low gate charge ( Typ. 36nC)
Low C
rss
( Typ. 35pF)
Fast switching
Improved dv/dt capability
RoHS compliant
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
G
S
TO-3PN
G
S
D
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
V
GSS
Parameter
Ratings
250
±30
33
21
132
918
33
24.6
4.5
245
1.96
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
I
D
Drain Current
-Continuous (T
C
= 25
o
C)
-Continuous (T
C
= 100
o
C)
- Pulsed (Note 1)
A
I
DM
E
AS
I
AR
E
AR
dv/dt
Drain Current
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
P
D
Power Dissipation
T
J
, T
STG
T
L
300
o
C
Symbol
Parameter
Ratings
Units
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction to Case
0.51
o
C/W
Thermal Resistance, Case to Sink Typ.
0.24
Thermal Resistance, Junction to Ambient
40
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